View SGM5223YWQ10TR_4142112.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SGM5223
GENERAL DESCRIPTION
0.5 Ultra Low ON-Resistance, Dual, SPDT Analog Switch
FEATURES
- Voltage Operation : 1. 8V to 4.2V - Ultra Low On-Resistance: 0.5 (TYP) at 4.2V - Fast Switching Time tON 17 ns tOFF 27.5 ns - High Off-Isolation: -58dB at 1MHz - Low Crosstalk: -104dB at 1MHz - Rail-to-Rail input and output Operation - 1.8V logic Compatible control pin - Break-Before-Make Switching - Extended Industrial Temperature Range: -40C to 85C - Lead (Pb) Free WQFN-10 Package
The SGM5223 is a dual single-pole/double-throw (SPDT) analog switch designed to operate from a single +1.8V to +4.2V power supply. Targeted applications include battery powered equipment that benefit from SGM5223's low ON-resistance (0.5) and fast switching speeds (tON = 17ns, tOFF = 27.5ns). SGM5223 has excellent on-resistance matching (0.18 max) between switches and guarantees excellent on-resistance flatness over all signal range (0.1 TYP). This ensures excellent linearity and low distortion when switching audio signals. The SGM5223 is a committed dual single-pole/double -throw (SPDT) that consist of two normally open (NO) and two normally close (NC) switches. This configuration can be used as a dual 2-to-1 multiplexer. SGM5223 is available in Pb-free WQFN-10 package.
PIN CONFIGURATIONTOP VIEW
NO1 2 COM1 IN1 NC1 3 4 5 6 7 NC2 V+ 1 10 9 8 NO2 COM2 IN2
APPLICATIONS
Portable Instrumentation Battery-Operated Equipment Computer Peripherals Speaker and Earphone Switching Medical Equipment Audio and Video Switching
FUNCTION TABLE
LOGIC 0 1 NO OFF ON NC ON OFF
GND
WQFN-10
Switches Shown For Logic "0" Input
Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com
REV.A
ELECTRICAL CHARACTERISTICS
(V+ = +4.2V, GND = 0V, VIH = +1.6V, VIL = +0.6V, TA = - 40C to + 85C. Typical values are at V+ = +4.2V, TA = + 25C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation tON tOFF tD OISO VIH = 3V, VIL= 0V, Test Circuit2 VIH = 3V, VIL= 0V, Test Circuit2 VIH = 3V, VIL= 0V, Test Circuit3 VBIAS = 2.1 V, VIN = 0dBm VIH = 3V, VIL= 0V, Test Circuit4 VBIAS = 2.1 V, VIN = 0dBm VIH = 3V, VIL= 0V, Test Circuit5 100KHz 1MHz 100KHz 1MHz +25C +25C +25C +25C +25C +25C +25C +25C +25C VIN = GND, RS = 0 , CL = 1.0 nF, Q = CL x VOUT, VIH = 3V, VIL= 0V,Test Circuit7 +25C 17.0 27.5 5.0 -78 -58 -100 -104 55 95 13 ns ns ns dB dB dB dB MHz pF pC VINH VINL IIN V+ = 4.2V, VIN = 0 or 4.2V - 40C to +85C - 40C to +85C - 40C to +85C 1.6 0.5 1 V V A VNO, VNC, VCOM RON RON RFLAT(ON) V+ = 4.2 V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 4.2V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 4.2V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C - 40C to +85C - 40C to +85C 0.1 0.1 0 0.5 V+ 0.75 0.85 0.11 0.18 0.23 0.22 0.26 1 1 V A A SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS
V+ = 4.2V, VNO or VNC = 3.3V/ 0.3V, INC(OFF), INO(OFF) VCOM = 0.3V/ 3.3V INC(ON), INO(ON), V+ = 4.2V, VCOM = 0.3V/ 3.3V, ICOM(ON) VNO or VNC = 0.3V/ 3.3V, or floating
Channel-to-Channel Crosstalk
XTALK
Bandwidth -3 dB Channel ON Capacitance Charge Injection Select Input to Common I/O POWER REQUIREMENTS Power Supply Range Power Supply Current
BW CON Q
VBIAS = 2.1 V, VIN = 0 dBm, VIH = 3V, VIL= 0V,Test Circuit6
V+ I+ V+ = 4.2V, VIN = 0V or V+
- 40C to +85C - 40C to +85C
1.8
4.2 1
V A
Specifications subject to change without notice.
2
SGM5223
ELECTRICAL CHARACTERISTICS
(V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = - 40C to +85C. Typical values are at V+ = +3.0V, TA = + 25C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation tON tOFF tD OISO VIH = 1.5V, VIL= 0V, Test Circuit2 VIH = 1.5V, VIL= 0V, Test Circuit2 VIH = 1.5V, VIL= 0V, Test Circuit3 VBIAS = 1.5 V, VIN = 0 dBm VIH = 1.5V, VIL= 0V, Test Circuit4 VBIAS = 1.5 V, VIN = 0 dBm VIH = 1.5V, VIL= 0V, Test Circuit5 100KHz 1MHz 100KHz 1MHz +25C +25C +25C +25C +25C +25C +25C +25C +25C +25C 22 34 15.5 -78 -58 -100 -104 55 8.5 95 ns ns ns dB dB dB dB MHz pC pF VINH VINL IIN V+ = 2.7V, VIN = 0 or 2.7V - 40C to +85C - 40C to +85C - 40C to +85C 1.5 0.4 1 V V A VNO, VNC, VCOM RON RON RFLAT(ON) INC(OFF), INO(OFF) INC(ON), INO(ON), ICOM(ON) V+ = 2.7 V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 3.6V, VNO or VNC = 3.3V / 0.3V, VCOM = 0.3V/ 3.3V V+ = 3.6V, VCOM = 0.3V/ 3.3V, VNO or VNC = 0.3V/ 3.3V, or floating - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C +25C - 40C to +85C - 40C to +85C - 40C to +85C 0.15 0.15 0.1 0.1 0 0.6 V+ 0.9 1 0.22 0.25 0.22 0.26 1 1 V A A SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS
Channel-to-Channel Crosstalk
XTALK
Bandwidth -3 dB Charge Injection Select Input to Common I/O Channel ON Capacitance
BW Q CON
VBIAS = 1.5 V, VIN = 0 dBm, VIH = 1.5V, VIL= 0V, Test Circuit6 VIN = GND, RS = 0 , CL = 1.0 nF, Q = CL x VOUT, VIH = 1.5V, VIL= 0V, Test Circuit7
Specifications subject to change without notice.
3
SGM5223
ORDERING INFORMATION
MODEL SGM5223 PINPACKAGE WQFN-10 SPECIFIED TEMPERATURE RANGE - 40C to +85C ORDERING NUMBER SGM5223YWQ10/TR PACKAGE MARKING 5223 PACKAGE OPTION Tape and Reel, 3000
ABSOLUTE MAXIMUM RATINGS
V+ , IN to GND............................................................... 0V to +4.6V Analog, Digital voltage range(1)....................... - 0.3V to (V+ + 0.3V) Continuous Current NO, NC, or COM..................................250mA Peak Current NO, NC, or COM.............................................350mA Operating Temperature Range...................................- 40C to +85C Junction Temperature...............................................................+150C Storage Temperature.................................................- 65C to +150C Lead Temperature (soldering, 10s).....................................+260C ESD HBM ...............................................................................4000V
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
PIN DESCRIPTION
WQFN PIN 1 6 4,8 3,9 2,10 5,7 NAME V+ GND IN1, IN2 COM1, COM2 NO1, NO2 NC1, NC2 FUNCTION Power supply Ground Digital control pin to connect the COM terminal to the NO or NC terminals Common terminal Normally-open terminal Normally-closed terminal
Note: NO, NC and COM terminal may be an input or output.
4
SGM5223
TYPICAL PERFORMANCE CHARACTERISTICS
Response vs.Frequency 3 V+ = +3V TA = +25 0 On Response(dB)
Response vs.Frequency 3 V+ = +4.2V TA = +25 0 On Response(dB)
-3
-3
-6
-6
-9 0.1 1 10 Frequency(MHz) 100 1000
-9 0.1 1 10 Frequency(MHz) 100 1000
Response vs.Frequency 20 0 -20 On Response(dB) -40 -60 -80 -100 -120 -140 0.01 V+ = +3V TA = +25 0.1 1 10 Frequency(MHz) 100 1000 CROSSTALK
Response vs.Frequency 20 0 -20 On Response(dB)
OFF-ISOLATION
-40 -60 -80 -100 -120
OFF-ISOLATION CROSSTALK
V+ = +4.2V TA = +25 0.1 1 10 Frequency(MHz) 100 1000
-140 0.01
5
SGM5223
TEST CIRCUITS
100mA V1 NO or NC VNO or VNC RON = V1/100mA
COM
Test Circuit 1. On Resistance
V+
NC NO COM RL 50 GND CL 35pF VOUT
V+ 50% VOH 50%
0.1 F IN
90%
90%
VOL tON tOFF
Test Circuit 2. Switching Times (tON, tOFF)
V+
NC NO COM RL 50 GND CL 35pF VOUT
V+ VIN 0 90% of VOH 50%
0.1F IN
VOUT 0 tD
Test Circuit 3. Break-Before-Make Time (tD)
6
SGM5223
TEST CIRCUITS (Cont.)
V+ 0.1F
V+ NO or NC Source Signal COM CL 5pF GND VOUT
IN
Test Circuit 4. Off Isolation
V+ 0.1F
V+ NO or NC Source Signal IN1 COM RL 50 CL 5pF
IN2 N.C. NO or NC GND COM RL 50 VNO or VNC VOUT CL 5pF VOUT
Channel To Channel Crosstalk = -20 xlog
Test Circuit 5. Channel-to-Channel Crosstalk
7
SGM5223
TEST CIRCUITS (Cont.)
0.1 F
V+
V+ NO or NC COM CL 5pF GND
VOUT
Source Signal
IN
Test Circuit 6. Bandwidth
V+ NC RS V+ NO IN GND COM CL 1nF VOUT VOUT 0 OUT
Q = VOUT x CL
Test Circuit 7. Charge Injection (Q)
8
SGM5223
PACKAGE OUTLINE DIMENSIONS
WQFN-10
1.800 0.050 0.400 0.050 (x9)
0.400 TYP
PIN #1 IDENTIFICATION CHAMFER 0.350x45
1.400 0.050
5223
0.5000.050 0.2000.050
0.800 REF
PIN #1 DOT BY MARKING
TOP VIEW
BOTTOM VIEW
0.7500.050
0.203 REF 0.000-0.050
SIDE VIEW
Note: All linear dimensions are in millimeters.
9
SGM5223
REVISION HISTORY
Location 10/07-- Data Sheet REV.A Page
Shengbang Microelectronics Co, Ltd
Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com
10
SGM5223

▲Up To Search▲

Price & Availability of SGM5223YWQ10TR

	To Download SGM5223YWQ10TR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .